Tin selenide (SnSe) is a newly emerging layered material. (1995) –Dept. Unlike tin oxides which are insulators, tin selenide is a narrow band gap semiconductor and is considered to be a promising material for several applications such as solar cells, optoelectronic devices and memory switching devices , , . Introduction. Tin selenide Tin selenide offer a range of optical band gaps suitable for various optical and optoelectronic applications. The different thicknesses of SnSe thin films, from 150 nm to 500 nm, were grown on glass substrate held at room temperature. In present investigations the structural properties of nanoparticles of Tin Selenide (SnSe) of group IV-VI semiconductors is reported. It is one of the promising materials from its applications. Tin selenide. The atomic number of tin is 50 and it is a period 4, group 4 element in the periodic table. In this review, we focus on the recent research progress in the area of design and synthesis of tin sulfides and selenides (SnS, SnS2, SnSe, and SnSe2) based anode materials for LIBs and NIBs. The nanocrystalline It is thus capable of absorbing a major portion of solar energy hence its use in fabricating solar cells. SnSe powder has been prepared using chemical precipitation method in deionized water. The diode characteristics such as short circuit current (Isc),open circuit voltage (Voc),fill factor (FF) and conversion coefficient (11) of the solar cell will be determined. 3 Soliman et al. The chemical name for tin is stannum and is represented by Sn. The structural, elemental, morphological, optical and electrical properties of the prepared films were investigated by X-ray diffraction (XRD), energy … This high ZT figure of merit has been attributed to an extremely low thermal conductivity found in the SnSe lattice. SnSe with low dimensionality has been reported as an appealing material with a diverse range of applications such as rechargeable lithium-ion batteries, memory switching devices, solar energy conversion, thermoelectric energy conversion, and near-infrared optoelectronic devices. Applications. Car et al. Tin monoselenide (SnSe) and tin diselenide (SnSe 2) are promising candidates for solar cell applications, memory switching devices, etc , . of Physics, Ain Shams University, Cairo. for Tin Selenide Dr. HoSung Lee April 2, 2015 1. In 2014, researchers at Northwestern University discovered that tin selenide (SnSe) has a ZT of 2.6 along the b axis of the unit cell. Tin Selenide is a narrow band gap binary IV-VI semiconductor material. (1962)): 0.9 eV 2. It is also suitable for various optoelectronic applications like memory switching devices, light emitting devices (LED), holographic recording systems among others. 4 (1978) –Istituto di Fisica del Politecnico, Milano Calculated bandgap: 2.1 eV Experimental value (Albers et al. Tin Selenide (SnSe) thin films were prepared from the pulverized compound material by thermal evaporation method, to study the effect of film thickness on its structural, and optical properties. Tin selenide can exist in two phases- hexagonal-phase SnSe 2 and orthorhombic-phase SnSe . Tin Selenide a p type and Nickel doped tin oxide n type deposited on a glass substrate will form a p-n junction. Tin selenide was synthesized by mechanical alloying method and the films were grown by economic screen-printing method on glass substrate. This is the highest value reported to date. The source materials used for the preparation of films were tin selenide and stannic chloride. 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